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Tuesday, May 12, 2020 | History

6 edition of Electron beam ion sources and traps and their applications found in the catalog.

Electron beam ion sources and traps and their applications

8th international symposium, EBIS/T 2000, Upton, New York, 5-8 November 2000

by International Symposium on Electron Beam Ion Sources and Traps and their Applications (8th 2000 Upton, N.Y.)

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Published by American Institute of Physics in Melville, N.Y .
Written in English

    Subjects:
  • Ion sources -- Congresses,
  • Electron beams -- Congresses

  • Edition Notes

    Includes bibliographical references and index.

    Statementeditor, Krsto Prelec.
    GenreCongresses.
    SeriesAIP conference proceedings -- v. 572., AIP conference proceedings -- no. 572.
    ContributionsPrelec, Krsto.
    Classifications
    LC ClassificationsQC+
    The Physical Object
    Paginationxiv, 304 p. :
    Number of Pages304
    ID Numbers
    Open LibraryOL18163200M
    ISBN 100735400113
    LC Control Number2001091142

      Brookhaven National Lab has successfully developed a new pre-injector system, called the Electron Beam Ion Source, for the Relativistic Heavy Ion Collider (R.   PDF Portable Synchrotron Light Sources and Advanced Applications 2nd International Symposium Read Online.

    Ion charge states of 3d metal ions in the electron beam of the Dresden electron beam ion trap (EBIT), a room-temperature EBIT, are determined by x-ray spectroscopy. Practical Electron Microscopy and Database, SEM, TEM, EELS, EDS, FIB online book in English. Gallium source in dual beam FIB/SEM & single beam FIB: Alloy liquid metal ion sources for advanced FIBs: FIB process and its applications: Passive voltage contrast (PVC) in FIB and SEM.

    REXEBIS - Design and initial commissioning results Wenander, F; Cederkäll, Joakim LU; Jonson, B; Liljeby, L; Nyman, G; Rensfelt, KG; Skeppstedt, O and Wolf, B () 8th International Symposum on Electron Beam Ion Sourges and Traps and Their Applications p Mark; Abstract The REXEBIS is an Electron Beam Ion Source (EBIS) developed particularly for charge breeding of rare and short. Abstract. We give an overview of atomic spectroscopy performed on electron beam ion traps at various locations throughout the world. Spectroscopy at these facilities contributes to various areas of science and engineering, including but not limited to basic atomic physics, astrophysics, extreme ultraviolet lithography, and the development of density and temperature diagnostics of fusion plasmas.


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Electron beam ion sources and traps and their applications by International Symposium on Electron Beam Ion Sources and Traps and their Applications (8th 2000 Upton, N.Y.) Download PDF EPUB FB2

Get this from a library. Electron beam ion sources and traps and their applications: 8th international symposium, EBIS/TUpton, New York, November [Krsto Prelec;]. EBISs as well as their applications in various fields of basic research, technol-ogy and medicine are discussed.

1 Introduction The idea to develop electron beam ion sources (EBISs) was constituted by the need for multiply charged ions for accelerator applications to derive high final particle kinetic energies and by a general scientificFile Size: 9MB.

Electron ionization is widely used in mass spectrometry, particularly for organic molecules. The gas phase reaction producing electron ionization is + − + ∙ + − where M is the atom or molecule being ionized, − is the electron, and + ∙ is the resulting ion. The electrons may be created by an arc discharge between a cathode and an anode.

An electron beam ion source (EBIS) is used in. Electron beam ion trap (EBIT) is an electromagnetic bottle that produces and confines highly charged EBIT uses an electron beam focused with a powerful magnetic field to ionize atoms to high charge states by successive electron impact.

It was invented. Electron Beam Ion Sources nack a;b, t b and b a University of Technology Dresden, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany bDreebit GmbH, Dresden, Germany Abstract Electron beam ion sources (EBISs) are ion sources that work based on the principle of electron impact ionization, allowing the production of very highlyCited by: Electron Beam Ion Sources • first proposed –developed at about the same time as ECR ion sources (Donets is one of the pioneers) • Driven by the need to use high charge states to increase the final energy for the accelerator 3 • Readings and materials for the lecture – Currell, F.

and G. Fussmann, Physics of Electron Beam Ion Traps and Sources. This book covers the development of sources of negative ions and their application in science and industry. It describes the physical foundations and implementation of the key methods of negative ion production and control, such as charge exchange, thermionic emission, secondary emission (sputtering) and surface-plasma sources, as well as the history of their development.

Electron beam ion sources (EBISs) are ion sources that work based on the principle of electron impact ionization, allowing the production of very highly charged ions.

• Handbook of Ion Sources, Bernhard H. Wolf, CRC Press, • Electron Cyclotron Resonance Ion Sources, R. Geller, IOP Pub, • Electron Beam Ion Sources and Traps and Their Applications, Krsto Prelec, Springer-Verlag, • CERN Accelerator School –CAS (), CERN 6.

Buy Electron Beam Ion Sources and Traps and Their Applications: 8th International Symposium EBIS/T, Upton, New York, November (AIP Conference Proceedings) on. Electron-beam lithography is a direct writing modus operandi and differs significantly from the photolithography.

It is a time-consuming serial process and an expensive technique. For electron-beam lithography a focused electron beam is scanned over a substrate covered with an electron-sensitive resist. The electron bombardment changes the resist, typically PMMA or methacrylate, chemically or.

Electron beam ion sources (EBISs) are ion sources that work based on the principle of electron impact ionization, allowing the production of very highly charged ions. The ions produced can be extracted as a DC ion beam as well as ion pulses of different time structures. In comparison to most of the other known ion sources, EBISs feature ion beams with very good beam emittances and a low energy.

Introduction. Electron beam ion traps (EBIT) and sources (EBIS) are known for their ability to produce ions in very high charge states. Essentially any charge state of any element can be produced, including bare U 92+ r remarkable, but seldom mentioned, property of these sources is the low emittance of the ion beams extracted from them.

Electron Beam Sources. Island e-Beam LLC produces top of the line electron beam sources for the physical vapor deposition (PVD) industry, including applications in optics, micro-electronics, medical, metallurgical, and telecommunications. This chapter presents the basic principles underlying the operation of electron beam ion traps, with the machine physics underlying their operation being described in some detail.

Predictions arising from this description are compared with some diagnostic measurements. This is followed by a brief description of their uses in atomic physics.

This book describes the development of sources of negative ions and their application in science and industry. It describes the physical foundations and implementation of the key methods of negative ion production and control, such as charge exchange, thermionic emission, secondary emission (sputtering) and surface-plasma sources, as well as the history of their development.

Electron Beam Ion Traps can produce ion charge states which do not occur naturally on Earth. One can find them in hot astrophysical plasmas and in solar flares. Before the invention of the EBIT, only large facilities (high energy accelerators, Tokamak fusion reactors, etc.) were capable of controlled production of very highly charged ions.

The electron beam method of stepwise ionization to highest charge states has found applications in electron beam ion sources (EBISs) for accelerators and atomic physics collision experiments as well as in electron beam ion traps (EBITs) for x-ray and mass spectroscopy. A dense and almost monoenergetic electron beam provides a unique tool for ionization, because radiative recombination by slow.

New types of devices could also evolve from the present experimental configurations of electron-beam ion traps, which, for example, might provide new and inexpensive laboratory sources of x-rays and highly charged ions and microwave devices with trapped ions designed into their operation. @article{osti_, title = {The Electron Beam Ion Source (EBIS)}, author = {Lab, Brookhaven}, abstractNote = {Brookhaven National Lab has successfully developed a new pre-injector system, called the Electron Beam Ion Source, for the Relativistic Heavy Ion Collider (RHIC) and NASA Space Radiation Laboratory science programs.

Electron beam ionisation Multifilament Laser Pigatrons Sputter Hollow cathode Field ionisation Duoplasmatron Surface ionisation Plasma beam A selection of types of ion source Table 1 source types which can be found.

and are limited only by the availability of a suitable source. Table 2 shows a selection of ion military and accelerator applications.ion/electron sources based on ultra-cold atoms and their potential applications in different fields, microscopy nanofa brication, imaging or spectroscopy.

The intention of the workshop is to bring together scientists working on the sources – many of whom are in the cold atom.• An intense electron beam interacts with ions trapped in an electrostatic well.

• Ions are confined radially by the space charge in the electron beam and axially by positive electrodes.

• The ions can be investigated within the trap or expelled by lowering the potential of .